STB12NK80Z-S - STMicroelectronics
Power Field-Effect Transistor, 10.5A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Resistance | 750mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 1980-01-04 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 190W |
| Min Breakdown Voltage | 800V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Production | ||
| Toshiba | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Fuji Electric | Obsolete | ||
| Renesas | Obsolete | ||
| Fuji Electric | Obsolete | ||
| Fuji Electric | Obsolete |
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