STB9NK90Z - STMicroelectronics

Power MOSFET, N Channel, 900 V, 8 A, 1.3 Ohm, TO-263 (D2PAK), 3 Pins, Surface Mount

Technical Details

Case/Package D2PAK
China RoHS Non-Compliant
Continuous Drain Current (ID) 8A
Country of Origin Mainland China
Current Rating 8A
Drain to Source Breakdown Voltage 900V
Drain to Source Resistance 1.3Ω
Drain to Source Voltage (Vdss) 800V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 11ns
Gate to Source Voltage (Vgs) 30V
Input Capacitance 2.115nF
Introduction Date 1997-09-16
Lead Free Lead Free
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 160W
Min Breakdown Voltage 900V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Terminals 2
Packaging Tape and Reel
Power Dissipation 160W
Radiation Hardening No
Rds On Max 1.3Ω
REACH SVHC No
Rise Time 13ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time 55ns
Turn-On Delay Time 22ns
Voltage Rating (DC) 900V

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STB9NK90Z | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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