STD5NB20 - STMicroelectronics
5A, 200V, 0.8 Ohm, N-channel, Si, Power, Mosfet, TO-252, DPAK-3
Technical Details
| Case/Package | TO-252 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mΩ |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Min Breakdown Voltage | 200V |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Power Dissipation | 45W |
| Rise Time | 13ns |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Diodes Inc. | Production | ||
| STMicroelectronics | Obsolete | ||
| Diodes Inc. | Production | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Diodes Inc. | Production | ||
| STMicroelectronics | Obsolete |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only