STP20NM60FD - STMicroelectronics

Transistor MOSFET N-CH 600V 20A 3-Pin (3+Tab) TO-220 Tube

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Continuous Drain Current (ID) 20A
Current Rating 20A
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 290mΩ
Drain to Source Voltage (Vdss) 600V
Element Configuration Single
Fall Time 22ns
Gate to Source Voltage (Vgs) 30V
Height 9.15mm
Input Capacitance 1.3nF
Lead Free Lead Free
Length 10.4mm
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 192W
Min Breakdown Voltage 600V
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 192W
Radiation Hardening No
Rds On Max 290mΩ
REACH SVHC No
Rise Time 12ns
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Threshold Voltage 4V
Turn-On Delay Time 25ns
Voltage Rating (DC) 600V
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics STP20NM60FD | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Production

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