STP30N06FI - STMicroelectronics
Power Field-Effect Transistor, 19A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Resistance | 50mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1980-01-04 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 40W |
| Min Breakdown Voltage | 60V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 35W |
| REACH SVHC | No |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Infineon | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete | ||
| Renesas | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete |
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