STW32NM50N - STMicroelectronics
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package
Technical Details
| Case/Package | TO-247 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 22A |
| Country of Origin | Mainland China |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 130mΩ |
| Drain to Source Voltage (Vdss) | 500V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 23.6ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.973nF |
| Introduction Date | 2012-08-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 190W |
| Min Breakdown Voltage | 500V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 190W |
| Rds On Max | 130mΩ |
| REACH SVHC | No |
| Rise Time | 9.5ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 110ns |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Infineon | Obsolete | ||
| Infineon | Obsolete | ||
| STMicroelectronics | Production | ||
| Vishay | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Production |
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