Bipolar (BJT) Single Transistor, NPN, 100 V, 1 A, 30 W, TO-220AB, Through Hole

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 700mV
Collector Emitter Voltage (VCEO) 100V
Country of Origin Mainland China
Current Rating 1A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Gain Bandwidth Product 3MHz
Height 9.15mm
hFE Min 15
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1990-02-16
Length 10.4mm
Lifecycle Status Production
Max Collector Current 1A
Max Operating Temperature 150°C
Max Power Dissipation 30W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 30W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 3MHz
Voltage Rating (DC) 100V
Weight 9.071847g
Width 4.6mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics TIP29C | RS

RS

Lifecycle Status Indicator

   Production

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