Discrete Semiconductors > Transistors > BJTs

TIP47 - STMicroelectronics

Bipolar (BJT) Single Transistor, NPN, 250 V, 1 A, 40 W, TO-220AB, Through Hole

Technical Details

Case/Package	TO-220
China RoHS	Non-Compliant
Collector Base Voltage (VCBO)	350V
Collector Emitter Breakdown Voltage	250V
Collector Emitter Saturation Voltage	1V
Collector Emitter Voltage (VCEO)	250V
Country of Origin	Mainland China
Current Rating	1A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	10MHz
Gain Bandwidth Product	10MHz
Height	15.75mm
hFE Min	10
Harmonized Tariff Schedule (HTS) Code	8541.29.00.95
Introduction Date	1980-01-06
Lead Free	Lead Free
Length	10.4mm
Lifecycle Status	Production
Max Collector Current	1A
Max Frequency	10MHz
Max Operating Temperature	150°C
Max Power Dissipation	40W
Min Operating Temperature	-65°C
Mount	Through Hole
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Polarity	NPN
Power Dissipation	40W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	10MHz
Weight	9.071847g
Width	4.6mm

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

STMicroelectronics TIP47 | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
Multicomp	TIP47	Production
onsemi	TIP47TU	Obsolete
Mospec	TIP47	Unknown
Central Semiconductor	TIP47	Obsolete
onsemi	TIP47G	Production
Texas Instruments	TIP47	Unknown
onsemi	TIP47	Obsolete
Bourns	TIP47	Obsolete
MCC	MJE13005-BP	Obsolete
onsemi	D44VH10	Obsolete

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USD

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DE: 4685

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0.5868

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