UF28150J - MACOM
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor...
Technical Details
| Body Material | Ceramic |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 65V |
| Element Configuration | Dual |
| Frequency | 500MHz |
| Gain | 8dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lifecycle Status | Production |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 389W |
| Min Breakdown Voltage | 65V |
| Min Operating Temperature | -55°C |
| Mount | Screw |
| Number of Elements | 1 |
| Number of Pins | 5 |
| Number of Terminals | 4 |
| Output Power | 150W |
| Packaging | Bulk |
| Power Dissipation | 389W |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Test Current | 400mA |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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