UF4SC120030K4S - Qorvo
Silicon Carbide MOSFET, Single, N Channel, 53 A, 1.2 kV, 39 Milliohms, TO-247, 4 Pins
Technical Details
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 39mΩ |
| Lifecycle Status | Production |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 341W |
| Min Breakdown Voltage | 1.2kV |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
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