UGB8BT-E3/81 - Vishay
Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB
Technical Details
| Average Rectified Current | 8A |
| Case/Package | TO-263-3 |
| China RoHS | Non-Compliant |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Common Cathode |
| Forward Current | 8A |
| Forward Voltage | 1.2V |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.80 |
| Introduction Date | 2006-05-26 |
| Lifecycle Status | Obsolete |
| Max Forward Surge Current (Ifsm) | 150A |
| Max Operating Temperature | 150°C |
| Max Output Current | 8A |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Voltage (DC) | 100V |
| Max Surge Current | 150A |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Peak Non-Repetitive Surge Current | 150A |
| Peak Reverse Current | 10µA |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Recovery Time | 30ns |
| Reverse Recovery Time | 30ns |
| Reverse Standoff Voltage | 100V |
| Reverse Voltage | 100V |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| Central Semiconductor | Production | ||
| Central Semiconductor | Obsolete | ||
| Taiwan Semiconductor | Production | ||
| STMicroelectronics | Production | ||
| Vishay | Production | ||
| STMicroelectronics | Obsolete | ||
| Diodes Inc. | Obsolete | ||
| STMicroelectronics | Obsolete |
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