ZTX857STZ - Diodes Inc.
Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Technical Details
| Case/Package | TO-92 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 330V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Continuous Collector Current | 3A |
| Country of Origin | Mainland China |
| Current Rating | 5A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| Height | 4.01mm |
| hFE Min | 15 |
| Introduction Date | 1994-01-01 |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 1.2W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount, Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Tape & Box (TB) |
| Polarity | NPN |
| Power Dissipation | 1.2W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 80MHz |
| Voltage Rating (DC) | 300V |
| Weight | 453.59237mg |
| Width | 2.41mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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