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ZXTP25012EFHTA - Diodes Inc.
Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Technical Details
| Case/Package | SOT-23 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -210mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 310MHz |
| Height | 1.02mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Lifecycle Status | Production |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 4A |
| Max Frequency | 310MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1.81W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Polarity | PNP |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Transition Frequency | 310MHz |
| Weight | 7.994566mg |
| Width | 1.4mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
Images
Future Electronics
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Diodes Inc. | NRND | ||
| Nexperia | Production | ||
| Sanyo | Obsolete | ||
| Diodes Inc. | Production | ||
| Diodes Inc. | Production | ||
| Diodes Inc. | Production | ||
| NXP Semiconductors | Obsolete | ||
| Diodes Inc. | Production | ||
| Diodes Inc. | Production | ||
| Toshiba | Obsolete |
Authorized Distributors
Non-Authorized Distributors
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