2SK3513-01L

2SK3513-01L

Fuji
2SK3513-01L
Production

Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 10A
Drain to Source Resistance 750mΩ
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 95W
Min Breakdown Voltage 600V
Number of Elements 1
Number of Terminals 3
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