SPI07N60S5

SPI07N60S5

Infineon
SPI07N60S5
Obsolete

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Case/Package TO-262-3
China RoHS Compliant
Continuous Drain Current (ID) 7.3A
Current Rating 7.3A
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 600mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 20ns
Gate to Source Voltage (Vgs) 20V
Halogen Free Not Halogen Free
Input Capacitance 970pF
Introduction Date 2000-01-31
Lead Free Lead Free
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 83W
Min Breakdown Voltage 600V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Power Dissipation 83W
Rds On Max 600mΩ
REACH SVHC Yes
Rise Time 40ns
RoHS Compliant
Turn-Off Delay Time 170ns
Voltage Rating (DC) 650V
Rochester Electronics

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