2SK3669

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Toshiba
2SK3669
EOL

Power Field-Effect Transistor, 10A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Continuous Drain Current (ID) 10A
Drain to Source Resistance 125mΩ
Drain to Source Voltage (Vdss) 100V
Export Control Classification Number (ECCN) Code EAR99
Introduction Date 2003-03-12
Lifecycle Status EOL
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Breakdown Voltage 100V
Number of Elements 1
Number of Terminals 2
RoHS Non-Compliant

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