RJK5002DPD-00#J2

RJK5002DPD-00#J2

Renesas
RJK5002DPD-00#J2
Production

Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Case/Package TO-252-3
China RoHS Compliant
Continuous Drain Current (ID) 2.4A
Drain to Source Voltage (Vdss) 500V
Export Control Classification Number (ECCN) Code EAR99
Part Family RJK5002DPD
Gate to Source Voltage (Vgs) 30V
Height 2.3mm
Harmonized Tariff Schedule (HTS) Code 8541.21.0095
Input Capacitance 165pF
Introduction Date 2012-08-09
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 30W
Min Operating Temperature -55°C
MSL 1
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Rds On Max
REACH SVHC Yes
RoHS Compliant
Threshold Voltage 3.5V

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