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| Breakdown Voltage | 6V |
| Capacitance | 1.2pF |
| Case/Package | DFN |
| China RoHS | Compliant |
| Clamping Voltage | 10V |
| Composition | Zener |
| Contact Plating | Gold |
| Country of Origin | Mainland China |
| Depth | 600µm |
| Direction | Unidirectional |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| ESD Protection | Yes |
| Height | 480µm |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.50 |
| Introduction Date | 2012-05-23 |
| Lead Free | Lead Free |
| Leakage Current | 1µA |
| Length | 1mm |
| Lifecycle Status | Production |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 250mW |
| Max Reverse Leakage Current | 1µA |
| Max Surge Current | 5A |
| Min Breakdown Voltage | 6V |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Number of Unidirectional Channels | 1 |
| Peak Pulse Current | 1A |
| Polarity | Unidirectional |
| Power Line Protection | No |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Standoff Voltage | 3.3V |
| RoHS | Compliant |
| Termination | SMD/SMT |
| Test Current | 1mA |
| Width | 675µm |
| Working Voltage | 3.3V |
Farnell
Farnell
DigiKey
DigiKey
DigiKey
TME
Avnet Silica
Avnet
Future Electronics
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Diodes Inc.
|
Production
|
Infineon
|
Obsolete
|
Infineon
|
Obsolete
|
Infineon
|
Obsolete
|
Infineon
|
Obsolete
|