|
| Case/Package | TO-252-3 |
| China RoHS | Non-Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 51mΩ |
| Drain to Source Voltage (Vdss) | -40V |
| Element Configuration | Single |
| Fall Time | 14.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.52mm |
| Input Capacitance | 674pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 8.9W |
| Min Breakdown Voltage | 40V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Power Dissipation | 4.18W |
| Radiation Hardening | No |
| Rds On Max | 51mΩ |
| REACH SVHC | No |
| Resistance | 51mΩ |
| Rise Time | 14.1ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 25.1ns |
| Turn-On Delay Time | 2.3ns |
| Weight | 3.949996g |
| Width | 6.2mm |
Diodes Inc.
|
Production
|
STMicroelectronics
|
Obsolete
|
Fairchild Semiconductor
|
Obsolete
|
Fairchild Semiconductor
|
Obsolete
|
onsemi
|
Obsolete
|