FQD2P25TF

FQD2P25TF

Fairchild Semiconductor
FQD2P25TF
Obsolete

Power Field-Effect Transistor, 2A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...

Case/Package DPAK
Continuous Drain Current (ID) 2A
Drain to Source Breakdown Voltage -250V
Drain to Source Resistance
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 25ns
Gate to Source Voltage (Vgs) 30V
Introduction Date 1999-12-07
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 37W
Min Breakdown Voltage 250V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 2
Power Dissipation 2.5W
REACH SVHC Yes
Rise Time 40ns
RoHS Non-Compliant
Turn-Off Delay Time 12ns
Fairchild Semiconductor
Obsolete
STMicroelectronics
Obsolete
Fairchild Semiconductor
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
EOL
Diodes Inc.
Obsolete
Diodes Inc.
Production
onsemi
Obsolete
onsemi
EOL
Vishay
Production
onsemi
Obsolete
Fairchild Semiconductor
Obsolete
Fairchild Semiconductor
Obsolete
Fairchild Semiconductor
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete

See more alternatives See less alternatives