FQI13N06

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Fairchild Semiconductor
FQI13N06
Obsolete

Power Field-Effect Transistor, 13A I(D), 60V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 13A
Drain to Source Resistance 135mΩ
Lifecycle Status Obsolete
Max Operating Temperature 175°C
Max Power Dissipation 45W
Min Breakdown Voltage 60V
Number of Elements 1
Number of Terminals 3
RoHS Non-Compliant
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