2N2609

No image

InterFET
2N2609
Unknown

Small Signal Field-Effect Transistor, P-Channel, Silicon, Junction FET, TO-18

Body Material Metal
Case/Package TO-18-3
Continuous Drain Current (ID) 5mA
Drain to Source Voltage (Vdss) -10V
Element Configuration Single
Gate to Source Voltage (Vgs) -30V
Max Operating Temperature 200°C
Max Power Dissipation 300mW
Number of Terminals 3
RoHS Non-Compliant

Other Distributors

Buy
Stock Break
US: 66
1 $20.58
10 $17.55
100 $15.17
1000 $15.17
Solitron Devices
Production
Central Semiconductor
Obsolete
Motorola
Obsolete
Toshiba
Obsolete
onsemi
Obsolete
onsemi
Obsolete
Vishay
Obsolete
Vishay
Obsolete
InterFET
Unknown
Central Semiconductor
Production
Vishay
Obsolete
Vishay
Obsolete
Motorola
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
Obsolete
Rochester Electronics
Unknown
onsemi
Obsolete
Calogic
Production

See more alternatives See less alternatives