MJD112RLG

MJD112RLG

onsemi
MJD112RLG
Production

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Case/Package DPAK
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Continuous Collector Current 2A
Country of Origin Mainland China
Current Rating 2A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Halogen Free Halogen Free
Height 2.38mm
hFE Min 200
Introduction Date 1999-01-01
Lead Free Lead Free
Length 6.73mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 100V
Max Collector Current 2A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Polarity NPN
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Transition Frequency 25MHz
Voltage Rating (DC) 100V
Width 6.22mm

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