MJD112T4

MJD112T4

onsemi
MJD112T4
Obsolete

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Case/Package TO-252-3
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Continuous Collector Current 2A
Country of Origin Malaysia
Current Rating 2A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Introduction Date 1991-06-01
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 100V
Max Collector Current 2A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Polarity NPN
Power Dissipation 20W
REACH SVHC No
RoHS Compliant
Transition Frequency 25MHz
Voltage Rating (DC) 100V

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1000 $0.2247
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