NTMFS4854NST1G

NTMFS4854NST1G

onsemi
NTMFS4854NST1G
Obsolete

Power MOSFET, Single, N-Channel, 25 V, 149 A, SO-8FL

Case/Package DFN
China RoHS Non-Compliant
Contact Plating Tin
Continuous Drain Current (ID) 15.2A
Country of Origin Malaysia
Drain to Source Breakdown Voltage 25V
Drain to Source Resistance 2.5mΩ
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 45ns
Gate to Source Voltage (Vgs) 16V
Input Capacitance 4.83nF
Introduction Date 2011-06-08
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Operating Temperature 150°C
Max Power Dissipation 86.2W
Min Breakdown Voltage 25V
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 8
Number of Terminals 8
Packaging Tape and Reel
Power Dissipation 2.31W
Radiation Hardening No
Rds On Max 2.5mΩ
REACH SVHC No
Rise Time 54ns
RoHS Compliant
Turn-Off Delay Time 38ns
Turn-On Delay Time 20ns

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