RN2111MFV

RN2111MFV

Toshiba
RN2111MFV
Production

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Collector Emitter Voltage (VCEO) 50V
hFE Min 120
Lifecycle Status Production
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Number of Elements 1
Number of Terminals 3
Resistance 10kΩ
RoHS Compliant

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CN: 24,000
1000 $0.3858
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HK: 40,825
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CN: 67,546
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10 $0.04
100 $0.03
1000 $0.03