SI8435DB-T1-E1

SI8435DB-T1-E1

Vishay
SI8435DB-T1-E1
Obsolete

Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

China RoHS Compliant
Continuous Drain Current (ID) 6.72A
Drain to Source Breakdown Voltage -20V
Drain to Source Resistance 75mΩ
Fall Time 91ns
Gate to Source Voltage (Vgs) 5V
Input Capacitance 1.6nF
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 6.25W
Min Breakdown Voltage 20V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 4
Number of Terminals 4
Packaging Digi-Reel®
Rds On Max 41mΩ
REACH SVHC Yes
Rise Time 29ns
RoHS Compliant
Turn-Off Delay Time 230ns
Turn-On Delay Time 15ns

Other Distributors

Buy
Stock Break
US: 2,977
1000 $2.6032
Buy
Stock Break
CN: 150
100 $0.62
1000 $0.62
Buy
Stock Break
CN: 60,000
Buy
Stock Break
IL: 301