SI8497DB-T2-E1

SI8497DB-T2-E1

Vishay
SI8497DB-T2-E1
Production

P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor...

Case/Package BGA
Continuous Drain Current (ID) 13A
Drain to Source Resistance 53mΩ
Drain to Source Voltage (Vdss) 30V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 22ns
Gate to Source Voltage (Vgs) 12V
Input Capacitance 1.32nF
Introduction Date 2011-07-28
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 13W
Min Breakdown Voltage 30V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 6
Number of Terminals 6
Radiation Hardening No
Rds On Max 53mΩ
REACH SVHC Yes
Rise Time 10ns
RoHS Compliant
Turn-Off Delay Time 75ns
Turn-On Delay Time 50ns

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