JANTXV2N5116

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Solitron Devices
JANTXV2N5116
Production

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18

Body Material Metal
Gate to Source Voltage (Vgs) 25V
Lifecycle Status Production
Max Operating Temperature 200°C
Max Power Dissipation 500mW
Mount Surface Mount
Number of Elements 1
Number of Terminals 3
Radiation Hardening No
RoHS Non-Compliant

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