Image |
Part Summary |
Avg Price |
Lifecycle Status |
Mount |
Case/Package |
Number of Pins |
Weight |
Contact Plating |
Min Operating Temperature |
Max Operating Temperature |
Packaging |
Max Power Dissipation |
Package Quantity |
Number of Elements |
Collector Emitter Voltage (VCEO) |
Polarity |
Collector Base Voltage (VCBO) |
Emitter Base Voltage (VEBO) |
Collector Emitter Saturation Voltage |
Max Collector Current |
Collector Emitter Breakdown Voltage |
Transition Frequency |
Max Breakdown Voltage |
Power Dissipation |
Collector-emitter Voltage-Max |
Series |
Frequency |
Max Frequency |
hFE Min |
Voltage Rating (DC) |
Gain Bandwidth Product |
Current Rating |
Continuous Collector Current |
Termination |
Current |
Voltage |
Output Voltage |
Diameter |
Length |
Height |
Width |
RoHS |
Ratings |
Radiation Hardening |
RoHS Compliant |
Lead Free |
Reach SVHC Compliant |
Halogen Free |
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MMBT2222A-7-FDIODES INC. - MMBT2222A-7-F - Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 300 mW, 600 mA, 100 hFE |
USD
0.0218
|
Volume Production
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Surface Mount | SOT-23 | 3 | 0.008g | -55°C | 150°C | Tape and Reel | 300mW | 3000 | 1 | 40V | NPN | 75V | 6V | 1V | 600mA | 40V | 300MHz | 40V | 350mW | 1V | Automotive, AEC-Q101 | 300MHz | 300MHz | 100 | 40V | 300MHz | 600mA | 600mA | SMD/SMT | 1A | 40V | 3.05mm | 1mm | 1.4mm | Yes | No | Yes | Lead Free | No | ||||||
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PZT2222AT1GON SEMICONDUCTOR PZT2222AT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 300 |
USD
0.0546
|
Volume Production
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SOT-223-4 | 4 | -65°C | 150°C | Tape and Reel | 1.5W | 1000 | 1 | 40V | NPN | 75V | 6V | 1V | 600mA | 40V | 300MHz | 40V | 1.5W | 1V | - | 300MHz | 300MHz | 35 | 40V | 300MHz | 6.5mm | 1.57mm | 3.5mm | Yes | No | Yes | No | ||||||||||||||
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MJD45H11T4GON SEMICONDUCTOR - MJD45H11T4G - Bipolar (BJT) Single Transistor, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE - Bipolar (BJT) Single Transistor, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE |
USD
0.202
|
Volume Production
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DPAK | 3 | -55°C | 150°C | Tape and Reel | 1.75W | 2500 | 1 | 80V | PNP | 5V | 5V | 1V | 8A | 80V | 90MHz | 80V | 1.75W | 1V | - | 90MHz | 90MHz | 60 | -80V | 90MHz | -8A | 6.73mm | 2.38mm | 6.22mm | Yes | No | Yes | Lead Free | No | Halogen Free | |||||||||||
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PZTA42T1GON SEMICONDUCTOR - PZTA42T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 300 V, 50 MHz, 1.5 W, 50 mA, 50 hFE |
USD
0.072
|
Volume Production
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SOT-223-4 | 4 | -65°C | 150°C | Tape and Reel | 1.5W | 1000 | 1 | 300V | NPN | 300V | 6V | 500mV | 500mA | 300V | 50MHz | 300V | 1.5W | 500mV | - | 50MHz | 50MHz | 25 | 300V | 50MHz | 500mA | 6.5mm | 1.57mm | 3.5mm | Yes | No | Yes | Lead Free | No | ||||||||||||
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BC856BLT1GON SEMICONDUCTOR - BC856BLT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 hFE |
USD
0.007
|
Volume Production
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SOT-23-3 | 3 | Tin, Matte | -55°C | 150°C | Tape and Reel | 300mW | 3000 | 1 | 65V | PNP | 80V | 5V | -650mV | 100mA | 65V | 100MHz | 65V | 300mW | 650mV | - | 100MHz | 100MHz | 220 | -65V | 100MHz | -100mA | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||
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BFN26E6327HTSA1BFN26 Series NPN 300 V 200 mA SMT Silicon High-Voltage Transistor - SOT-23-3 |
USD
0.036
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Not Recommended for New Design
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Surface Mount | SOT-23 | 3 | -65°C | 150°C | Tape and Reel | 360mW | 1 | 1 | 300V | NPN | 300V | 6V | 500mV | 200mA | 300V | 70MHz | 300V | 360mW | 500mV | - | 70MHz | 70MHz | 300V | 200mA | 200mA | 2.9mm | 0.9mm | 1.3mm | Yes | No | Yes | Lead Free | Not Halogen Free | ||||||||||||
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MMBTA13LT1GBIPOLAR TRANSISTOR, NPN, 30V, SOT-23; TR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:125MHz; Power Dissipation Pd:225mW; DC Collector Current:300mA; DC Current Gain hFE:10000; Transistor ;RoHS Compliant: Yes |
USD
0.011
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Volume Production
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SOT-23-3 | 3 | 1.44g | -55°C | 150°C | Tape and Reel | 225mW | 3000 | 1 | 30V | NPN | 30V | 10V | 1.5V | 300mA | 30V | 125MHz | 30V | 225mW | 1.5V | - | 5000 | 30V | 300mA | 300mA | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | Halogen Free | ||||||||||||
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BC807-16LT1GON SEMICONDUCTOR BC807-16LT1G Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 100 hFE |
USD
0.009
|
Volume Production
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SOT-23-3 | 3 | -55°C | 150°C | Tape and Reel | 300mW | 1 | 1 | 45V | PNP | 50V | 5V | -700mV | 500mA | 45V | 100MHz | 45V | 300mW | 700mV | - | 100MHz | 100MHz | 100 | 100MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | Halogen Free | |||||||||||||
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BC847BPDW1T1GON SEMICONDUCTOR - BC847BPDW1T1G. - TRANSISTOR, NPN/PNP, SOT363 |
USD
0.01
|
Volume Production
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SOT-363-6 | 6 | Tin, Matte | -55°C | 150°C | Tape and Reel | 380mW | 3000 | 2 | 45V | NPN, PNP | 50V | 5V | 600mV | 100mA | 45V | 100MHz | 45V | 380mW | 600mV | - | 100MHz | 100MHz | 150 | 45V | 100MHz | 1A | SMD/SMT | 5V | 2mm | 0.9mm | 1.25mm | Yes | No | Yes | Lead Free | No | Halogen Free | ||||||||
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BCM856SH6327XTSA1TRANS, PNP, DUAL, -65V, SOT363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes |
USD
0.01
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End of Life
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Surface Mount | SOT-363 | 6 | Tin, Matte | -65°C | 150°C | Tape and Reel | 250mW | 3000 | 2 | 5V | PNP | 80V | 5V | 650mV | 100mA | 65V | 250MHz | 65V | 250mW | 650mV | - | 250MHz | 250MHz | 100mA | 2mm | 0.8mm | 1.25mm | Yes | No | Yes | Lead Free | Halogen Free | |||||||||||||
Results 141 - 150 of 19497
