Image |
Part Summary |
Avg Price |
Lifecycle Status |
Mount |
Case/Package |
Number of Pins |
Weight |
Contact Plating |
Min Operating Temperature |
Max Operating Temperature |
Max Power Dissipation |
Packaging |
Package Quantity |
Max Collector Current |
Emitter Base Voltage (VEBO) |
Collector Emitter Breakdown Voltage |
Series |
Collector Emitter Voltage (VCEO) |
Transition Frequency |
Collector Base Voltage (VCBO) |
Polarity |
Max Breakdown Voltage |
Number of Elements |
Frequency |
Power Dissipation |
Collector Emitter Saturation Voltage |
Current Rating |
Collector-emitter Voltage-Max |
hFE Min |
Max Frequency |
Voltage Rating (DC) |
Gain Bandwidth Product |
Gain |
Noise Figure |
Power Gain |
Continuous Collector Current |
Type |
Output Current |
Output Voltage |
Max Output Voltage |
Number of Outputs |
Turn-Off Delay Time |
Turn-On Delay Time |
Diameter |
Length |
Height |
Width |
RoHS |
Ratings |
Radiation Hardening |
RoHS Compliant |
Lead Free |
Reach SVHC Compliant |
Halogen Free |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BC856BDW1T1GON SEMICONDUCTOR - BC856BDW1T1G - TRANSISTOR, PNP, -65V, -100MA, SOT-363-6 |
USD
0.0133
|
Volume Production
|
SOT-363-6 | 6 | -55°C | 150°C | 380mW | Tape and Reel | 3000 | 100mA | 5V | 65V | - | 65V | 100MHz | 80V | PNP | 65V | 2 | 100MHz | 380mW | -650mV | -100mA | 650mV | 220 | 100MHz | -65V | 100MHz | 2mm | 0.9mm | 1.25mm | Yes | No | Yes | Lead Free | No | ||||||||||||||||||
|
|
BFP740FESDH6327XTSA1Infineon BFP740FESDH6327 NPN SiGe Bipolar Transistor, 0.045 A, 4.2 V, 4-Pin TSFP |
USD
0.1672
|
Volume Production
|
Surface Mount | SMD/SMT | 4 | Tin | -55°C | 150°C | 160mW | Tape and Reel | 3000 | 45mA | 500mV | 4.7V | - | 47GHz | 4.9V | 4.7V | 47GHz | 31dB | 0.6dB | 27dB | 1.4mm | 0.55mm | 0.8mm | Yes | Yes | Lead Free | Halogen Free | |||||||||||||||||||||||||
|
|
BC817-25LT1GTrans GP BJT NPN 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R |
USD
0.014
|
Volume Production
|
SOT-23-3 | 3 | Tin, Matte | -55°C | 150°C | 300mW | Tape and Reel | 3000 | 500mA | 5V | 45V | - | 45V | 100MHz | 50V | NPN | 45V | 1 | 100MHz | 300mW | 700mV | 500mA | 700mV | 160 | 100MHz | 100MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | Halogen Free | |||||||||||||||||
|
|
BFP740FH6327XTSA1Very low noise amplifier based on Infineons reliable, high volume SiGe:C technologyOIP3 = 24 dBm @ 5.5 GHz, 3 V, 15 mAHigh transition frequency fT = 45 GHz @ 3 V, 25 mANFmin = 1.0 dB @ 5.5 GHz, 3 V, 6 mAMaximum power gain Gms = 21 dB @ 5.5 GHz, 3 V, 15 mALow power consumption, ideal for mobile applications, very common in WLAN Wi-Fi applicationsThin small flat Pb-free (RoHS compliant) and halogen-free package with visible leadsQualification report according to AEC-Q101 available |
USD
0.188
|
Volume Production
|
Surface Mount | SMD/SMT | 4 | Tin, Matte | -65°C | 150°C | 160mW | Tape and Reel | 3000 | 30mA | 1.2V | 4.7V | - | 4V | 42GHz | 13V | NPN | 4.7V | 1 | 42GHz | 160mW | 27.5dB | 0.5dB | 27.5dB | Yes | Yes | Lead Free | No | Halogen Free | |||||||||||||||||||||||
|
|
BFP420FH6327XTSA1Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:4.5V; Transition Frequency Ft:25Ghz; Power Dissipation Pd:210Mw; Dc Collector Current:60Ma; Rf Transistor Case:tsfp; No. Of Pins:4Pins; Dc Current Gain Hfe:60Hfe Rohs Compliant: Yes |
USD
0.092
|
Volume Production
|
Surface Mount | SMD/SMT | 4 | Tin, Matte | -55°C | 150°C | 210mW | Tape and Reel | 3000 | 60mA | 1.5V | 5.5V | - | 4.5V | 25GHz | 15V | NPN | 5.5V | 1 | 25GHz | 210mW | 19.5dB | 1.1dB | 19.5dB | 1.4mm | 0.55mm | 0.8mm | Yes | No | Yes | Lead Free | Halogen Free | ||||||||||||||||||||
|
|
SMBTA06UPNE6327HTSA1Infineon SMBTA 06UPN E6327 Dual NPN+PNP Bipolar Transistor, 0.5 A, 80 V, 6-Pin SC-74 |
USD
0.045
|
End of Life
|
Surface Mount | SC | 6 | -65°C | 150°C | 330mW | Tape and Reel | 3000 | 500mA | 4V | 80V | - | 250mV | 100MHz | 80V | NPN, PNP | 80V | 2 | 100MHz | 330mW | 250mV | 500mA | 250mV | 100 | 80V | 500mA | Yes | No | Yes | Lead Free | Not Halogen Free | |||||||||||||||||||||
|
|
MJD31CT4GON SEMICONDUCTOR MJD31CT4G Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE |
USD
0.1192
|
Volume Production
|
DPAK | 3 | -65°C | 150°C | 1.56W | Tape and Reel | 2500 | 3A | 5V | 100V | - | 100V | 3MHz | 100V | NPN | 100V | 1 | 3MHz | 1.56W | 1.2V | 3A | 1.2V | 25 | 3MHz | 100V | 3MHz | 6.73mm | 2.38mm | 6.22mm | Yes | No | Yes | Lead Free | No | ||||||||||||||||||
|
|
ULN2803ASTMICROELECTRONICS - ULN2803A - Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP RoHS Compliant: Yes |
USD
0.251
|
Volume Production
|
Through Hole | DIP | 18 | 1.27g | -20°C | 85°C | 2.25W | Rail/Tube | 1000 | 500mA | 50V | 50V | - | 50V | NPN | 8 | 1.1V | 500mA | 1.6V | 50V | 500mA | 500mA | 50V | 50V | 8 | 250ns | 250ns | 23.24mm | 3.68mm | 7.1mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||
|
|
MBT3904DW1T1GON SEMICONDUCTOR - MBT3904DW1T1G - Bipolar (BJT) Array Transistor, General Purpose, Dual NPN, 40 V, 150 mW, 200 mA, 30, SOT-363 RoHS Compliant: Yes |
USD
0.013
|
Volume Production
|
SOT-363-6 | 6 | -55°C | 150°C | 150mW | Tape and Reel | 3000 | 200mA | 6V | 40V | - | 40V | 300MHz | 60V | NPN | 40V | 2 | 300MHz | 150mW | 300mV | 200mA | 300mV | 40 | 300MHz | 40V | 300MHz | General Purpose | 2.18mm | 1mm | 1.35mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||
|
|
BC848CLT1GON SEMICONDUCTOR - BC848CLT1G - TRANSISTOR, NPN, SOT-23 |
USD
0.0089
|
Volume Production
|
SOT-23-3 | 3 | Tin, Matte | -55°C | 150°C | 300mW | Tape and Reel | 3000 | 100mA | 5V | 30V | - | 30V | 100MHz | 30V | NPN | 30V | 1 | 100MHz | 300mW | 600mV | 100mA | 600mV | 420 | 100MHz | 30V | 100MHz | 2.9mm | 0.94mm | 1.3mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||
Results 121 - 130 of 19489
