Uncategorized
2N4339 - Texas Instruments
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Continuous Drain Current (ID) | 1.5mA |
| Current Rating | 50mA |
| Drain to Source Resistance | 1.7kΩ |
| Gate to Source Voltage (Vgs) | -50V |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| InterFET | Unknown | ||
| STMicroelectronics | Obsolete | ||
| InterFET | Unknown | ||
| Microchip | Production | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| Texas Instruments | Unknown | ||
| InterFET | Unknown | ||
| Vishay | Obsolete |
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