2N4861A - InterFET
Power Field-Effect Transistor, 60ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Case/Package | TO-18-3 |
| Continuous Drain Current (ID) | 500pA |
| Drain to Source Resistance | 60Ω |
| Drain to Source Voltage (Vdss) | 15V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | -30V |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 360mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 1.8W |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Texas Instruments | Unknown | ||
| Motorola | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Microchip | Production | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| InterFET | Unknown | ||
| Texas Instruments | Unknown | ||
| InterFET | Unknown | ||
| Texas Instruments | Obsolete |
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