2N6213 - Microchip

PNP Power Transistor Silicon Amp Bipolar (bjt) Transistor PNP 350 V 2 A 3 W Through Hole TO-66 (TO-213AA)

Technical Details

Projected EOL Date 2049-02-05
Case/Package TO-66
Collector Base Voltage (VCBO) 400V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 350V
Contact Plating Lead, Tin
Country of Assembly Philippines
Country of Fabrication United States of America
Country of Origin PHL
Export Control Classification Number (ECCN) Code EAR99
Emitter Base Voltage (VEBO) 6V
Height 8.64mm
hFE Min 30
Harmonized Tariff Schedule (HTS) Code 8541.29.0095
Lifecycle Status Production
Manufacturer Lifecycle Status REL
Max Collector Current 2A
Max Operating Temperature 200°C
Max Power Dissipation 3W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 0
Packaging Bulk
Power Dissipation 3W
RoHS Non-Compliant

Compliance

   RoHS : Unconfirmed

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Lifecycle Status Indicator

   Production
Symbol
Footprint

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