TIP120 - onsemi

Bulk Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 3A 3V 5A 65W 60V

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 60V
Contact Plating Tin
Continuous Collector Current 5A
Country of Origin Mainland China
Current Rating 5A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 9.2mm
hFE Min 1000
Introduction Date 1993-03-03
Lead Free Lead Free
Length 9.9mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 60V
Max Collector Current 5A
Max Operating Temperature 150°C
Max Power Dissipation 65W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 65W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Voltage Rating (DC) 60V
Weight 1.214g
Width 4.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Mospec Unknown
Central Semiconductor Obsolete
onsemi Production
STMicroelectronics Production
Microchip Production
Microchip Production
Microchip Production
Microchip Production
onsemi Production
Central Semiconductor Obsolete

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