2SC5566-TD-E - ON Semiconductor

Bipolar Transistors - BJT BIP NPN 4A 50V

Technical Details

Case/Package TO-243AA
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 85V
Collector Emitter Voltage (VCEO) 100V
Collector-emitter Voltage-Max 225mV
Emitter Base Voltage (VEBO) 6V
Frequency 400MHz
Gain Bandwidth Product 400MHz
Height 1.5mm
hFE Min 200
Lead Free Lead Free
Length 4.5mm
Max Breakdown Voltage 50V
Max Collector Current 4A
Max Frequency 1MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.3W
Number of Elements 1
Number of Pins 3
Package Quantity 1000
Packaging Tape and Reel
Polarity NPN
Power Dissipation 1.3W
Radiation Hardening No
RoHS Compliant Yes
Transition Frequency 400MHz
Width 2.5mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

ON Semiconductor 2SC5566-TD-E | Verical

Verical

ON Semiconductor 2SC5566-TD-E | Farnell

Farnell

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