2SD1816S-E - onsemi

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Technical Details

Case/Package TO-251-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 120V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin Bismuth
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 180MHz
Gain Bandwidth Product 130MHz
hFE Min 140
Introduction Date 2012-06-05
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 4A
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 1W
REACH SVHC No
RoHS Compliant
Schedule B 8541290080
Transition Frequency 180MHz

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi EOL
onsemi Production
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
NTE Electronics Obsolete

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