2SD1816S-TL-E - onsemi

Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single

Technical Details

Case/Package TO-252-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 120V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 400mV
Collector Emitter Voltage (VCEO) 100V
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Gain Bandwidth Product 130MHz
Height 2.3mm
hFE Min 140
Lead Free Lead Free
Length 6.5mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 4A
Max Frequency 180MHz
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
Packaging Tape and Reel
Polarity NPN
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 180MHz
Width 5.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi 2SD1816S-TL-E | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Production
Symbol
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Alternatives (Possible Substitutes)

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