2SJ338 - Toshiba
Power Field-Effect Transistor, 1A I(D), 180V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 180V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 1994-04-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Min Breakdown Voltage | 180V |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Fairchild Semiconductor | Obsolete | ||
| Toshiba | EOL | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Infineon | Obsolete |
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