2SJ668 - Toshiba
TRANSISTOR 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power
Technical Details
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 250mΩ |
| Drain to Source Voltage (Vdss) | 60V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2004-07-27 |
| Lifecycle Status | EOL |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 20W |
| Min Breakdown Voltage | 60V |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Fairchild Semiconductor | Obsolete | ||
| Toshiba | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Infineon | Obsolete |
Non-Authorized Distributors
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only