2SK2013 - Toshiba
Power Field-Effect Transistor, 1A I(D), 180V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Technical Details
| Continuous Drain Current (ID) | 1A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1994-04-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 25W |
| Min Breakdown Voltage | 180V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 25W |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Obsolete | ||
| Panasonic | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Panasonic | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| STMicroelectronics | Obsolete |
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