2SK858 - Toshiba
Power Field-Effect Transistor, 2A I(D), 600V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 4Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1994-01-01 |
| Lifecycle Status | Obsolete |
| Min Breakdown Voltage | 600V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 40W |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Obsolete | ||
| Panasonic | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Panasonic | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| Toshiba | Obsolete | ||
| STMicroelectronics | Obsolete |
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