2STR1160 - STMicroelectronics

Bipolar (Bjt) Single Transistor, Npn, 60 V, 500 Mw, 1 A, 250 |Stmicroelectronics 2STR1160

Technical Details

Case/Package SOT-23
Collector Base Voltage (VCBO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 430mV
Collector Emitter Voltage (VCEO) 60V
Collector-emitter Voltage-Max 430mV
Contact Plating Tin, Matte
Emitter Base Voltage (VEBO) 5V
Height 1.3mm
hFE Min 180
Lead Free Lead Free
Length 3.04mm
Max Breakdown Voltage 60V
Max Collector Current 1A
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Package Quantity 1
Packaging Tape and Reel
Polarity NPN
Power Dissipation 500mW
Radiation Hardening No
Reach SVHC Compliant No
RoHS Compliant Yes
Termination SMD/SMT
Width 1.6mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Images

STMicroelectronics 2STR1160 | Mouser

Mouser

STMicroelectronics 2STR1160 | Future Electronics

Future Electronics

Lifecycle Status Indicator

   Not Recommended for New Design
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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
ON Semiconductor / Fairchild Obsolete
ON Semiconductor / Fairchild Obsolete
MCC Volume Production
Diodes Volume Production
ON Semiconductor Volume Production
Diodes Zetex Volume Production
Infineon Not Recommended for New Design
Infineon Not Recommended for New Design
Infineon Obsolete
MCC Volume Production

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