2STR1230 - STMicroelectronics

STMICROELECTRONICS 2STR1230 Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 1.5 A, 330 hFE

Technical Details

Case/Package SOT-23
Collector Base Voltage (VCBO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 850mV
Collector Emitter Voltage (VCEO) 30V
Collector-emitter Voltage-Max 850mV
Contact Plating Tin, Matte
Current Rating 1.5A
Emitter Base Voltage (VEBO) 5V
Height 0.95mm
hFE Min 210
Lead Free Lead Free
Length 2.9mm
Max Breakdown Voltage 30V
Max Collector Current 1.5A
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Package Quantity 1
Packaging Tape and Reel
Polarity NPN
Power Dissipation 500mW
Radiation Hardening No
Reach SVHC Compliant No
RoHS Compliant Yes
Termination SMD/SMT
Voltage Rating (DC) 30V
Width 1.3mm

Compliance

   RoHS : Compliant
   Radiation Hardening : No

Lifecycle Status Indicator

   Not Recommended for New Design

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
ON Semiconductor / Fairchild Obsolete
MCC Volume Production
Diodes Volume Production
ON Semiconductor Volume Production
Infineon Obsolete
Diodes Zetex Volume Production
ON Semiconductor / Fairchild Obsolete
MCC Volume Production
Diodes Not Recommended for New Design
ON Semiconductor / Fairchild Obsolete

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