AP4525GEM - Advanced Power Electronics
Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide...
Technical Details
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 28mΩ |
| Max Operating Temperature | 150°C |
| Min Breakdown Voltage | 40V |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| REACH SVHC | Yes |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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