Discrete Semiconductors > Transistors > BJTs

BC857B - Taiwan Semiconductor

SOT-23 -50V -0.1A PNP Bipolar Transistor

Breakdown Voltage	51V
Case/Package	SOT-23
China RoHS	Compliant
Clamping Voltage	70.1V
Collector Base Voltage (VCBO)	-50V
Collector Emitter Saturation Voltage	-650mV
Collector Emitter Voltage (VCEO)	-45V
Continuous Collector Current	-100mA
Drain to Source Voltage (Vdss)	-60V
Element Configuration	Single
Emitter Base Voltage (VEBO)	-5V
Forward Voltage	1V
Gate to Source Voltage (Vgs)	-1.5V
Height	1.2mm
hFE Min	220
Input Capacitance	436pF
Length	3mm
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	100mA
Max Forward Surge Current (Ifsm)	2.5A
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	250mW
Max Repetitive Reverse Voltage (Vrrm)	250V
Max Reverse Leakage Current	1µA
Min Operating Temperature	-55°C
Mount	Surface Mount
Number of Channels	2
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Peak Pulse Current	21.4A
Peak Pulse Power	1.5kW
Polarity	PNP
Power Dissipation	200mW
REACH SVHC	Yes
Reverse Recovery Time	50ns
Reverse Standoff Voltage	24V
RoHS	Compliant
Test Current	2.5mA
Transition Frequency	100MHz
Width	1.4mm
Zener Voltage	75V

RoHS : Unconfirmed

REACH SVHC : Yes

Production

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
onsemi	SBC857BLT1G	Production
Nexperia	BC857BW/MIF	Obsolete
Leshan Radio Co.	LBC857BLT1G	Unknown
onsemi	NST857BF3T5G	Production
Taiwan Semiconductor	BC857B RFG	Production
Taiwan Semiconductor	BC857BRF	Production
Central Semiconductor	BC857BR TR	Unknown
Leshan Radio Co.	LBC857BWT1G	Unknown
onsemi	SBC857BWT1G	Production
onsemi	NSVBC857BLT3G	Production

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Anglia

GB: 178200

0.0228

0.0202

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