BD435S - onsemi

6.0 A, 100 V PNP Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;

Technical Details

Case/Package TO-126
Collector Base Voltage (VCBO) 32V
Collector Emitter Breakdown Voltage 32V
Collector Emitter Saturation Voltage 200mV
Collector Emitter Voltage (VCEO) 32V
Contact Plating Tin
Country of Origin Mainland China
Current Rating 4A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 3MHz
Gain Bandwidth Product 3MHz
hFE Min 50
Introduction Date 1999-01-01
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 4A
Max Operating Temperature 150°C
Max Power Dissipation 36W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 36W
REACH SVHC No
RoHS Compliant
Transition Frequency 3MHz
Voltage Rating (DC) 32V
Weight 761mg

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi BD435S | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
MCC Obsolete

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