BDV65BG - onsemi

10 A, 100 V NPN Darlington Bipolar Power Transistor

Technical Details

Case/Package TO-247
China RoHS Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 100V
Contact Plating Tin
Country of Origin Mainland China
Current Rating 10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Introduction Date 1991-06-01
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 10A
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 125W
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541290080
Voltage Rating (DC) 100V

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi BDV65BG | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete
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Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Central Semiconductor Obsolete
onsemi Obsolete
Bourns Obsolete
Bourns Obsolete
Central Semiconductor Obsolete
STMicroelectronics Obsolete
onsemi Obsolete
Bourns Obsolete
Bourns Obsolete
Central Semiconductor Obsolete

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