BUR51 - STMicroelectronics
Power Bipolar Transistor, 60A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Case/Package | TO-3 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 200V |
| Contact Plating | Tin |
| Current Rating | 60A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 10V |
| Gain Bandwidth Product | 16MHz |
| hFE Min | 15 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1980-01-04 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Collector Current | 60A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 350W |
| Min Operating Temperature | -65°C |
| Mount | Chassis Mount |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Polarity | NPN |
| Power Dissipation | 350W |
| RoHS | Compliant |
| Transition Frequency | 16MHz |
| Voltage Rating (DC) | 300V |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Toshiba | Obsolete | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| onsemi | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Comset Semiconductors | Unknown |
Non-Authorized Distributors
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