2N3789 - Central Semiconductor
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Case/Package | TO-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 15 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 10A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 150W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Polarity | PNP |
| RoHS | Non-Compliant |
| Transition Frequency | 4MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Texas Instruments | Unknown | ||
| STMicroelectronics | Unknown | ||
| Central Semiconductor | Obsolete | ||
| Motorola | Obsolete | ||
| Motorola | Obsolete | ||
| Fairchild Semiconductor | Obsolete | ||
| Motorola | Obsolete | ||
| Motorola | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete |
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